FIRST SENSOR AG公司 PIN光电二极管
PIN Series
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Special features for Applications
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Series-2 Optimized for 200-500nm
|
UV/Blue enhanced for analytical instruments, readout for scintillators.
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Series-6b Optimized for 400-650nm
|
Blue/Green enhanced for photometric illuminometer.
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Series-5b Optimized for 350-650nm
|
High-speed blue enhanced for high speed photometry.
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Series-5t Optimized for 400-900nm
|
High-speed red-enhanced for high speed photometry.
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Series-5 Optimized for 400-950nm
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High-speed NIR-enhanced for high speed photometry.
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Series-6 Optimized for 700-950nm
|
Low dark current, fast response for precision photometry.
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Series-7 Optimized for 700-1100nm
|
Low capacity, full depletable for high energy physics.
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Series-Q Optimized for 900-1100nm
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Enhanced NIR sensitivity for YAG laser detection.
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Series 2: UV/Blue sensitive photodiodes
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|||||
Type No.
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Active area
|
Dark current
|
Rise time
|
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Chip
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Package
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Size
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Area
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5V
|
410nm 5V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PS1-2
|
TO52
|
1.0×1.0
|
1
|
0.01
|
50
|
PS1-2
|
LCC6.1
|
1.0×1.0
|
1
|
0.01
|
50
|
PC5-2
|
TO5
|
Ø2.52
|
5
|
0.3
|
150
|
PS7-2
|
TO5
|
2.66×2.66
|
7
|
0.4
|
200
|
PC10-2
|
TO5
|
Ø3.57
|
10
|
1
|
300
|
PS13-2
|
TO5
|
3.5×3.5
|
13
|
1
|
300
|
PS33-2
|
TO8
|
5.7×5.7
|
33
|
2
|
600
|
PC50-2
|
BNC
|
Ø7.98
|
50
|
5
|
1000
|
PS100-2
|
BNC
|
10×10
|
100
|
10
|
2000
|
PS100-2
|
CERpin
|
10×10
|
100
|
10
|
2000
|
Band pass filter modules: PC10-2 TO5i with center wavelength 254nm, 300nm, 350nm
|
|||||
Series 6b: Blue/Green sensitive photodiodes
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|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
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Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PS1-6b
|
TO52S1
|
1×1
|
1
|
0.05
|
10
|
PS1-6b
|
LCC6.1
|
1×1
|
1
|
0.05
|
10
|
PC5-6b
|
TO5
|
Ø2.52
|
5
|
0.1
|
20
|
PS7-6b
|
TO5
|
2.7×2.7
|
7
|
0.15
|
25
|
PC10-6b
|
TO5
|
Ø3.57
|
10
|
0.2
|
45
|
PS13-6b
|
TO5
|
3.5×3.5
|
13
|
0.25
|
50
|
PS33-6b
|
TO8
|
5.7×5.7
|
33
|
0.6
|
140
|
PS100-6b
|
LCC10S
|
10×10
|
100
|
1
|
200
|
PS100-6b
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CERpinE
|
10×10
|
100
|
1
|
200
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PS100-6b
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CERpinG
|
10×10
|
100
|
1
|
200
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Band pass filter modules: PR20-6b TO5i with center wavelength 488nm, 550nm, 633nm, 680nm
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Series 5b: High speed photodiodes (for blue-sensitive photodiodes)
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|||||
Type No.
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Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
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3.5V
|
405nm 3.5V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PS1.0-5b
|
TO52S1
|
1.0×1.0
|
1
|
0.01
|
1.3
|
PS1.0-5b
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LCC6.1
|
1.0×1.0
|
1
|
0.01
|
1.3
|
PS7-5b
|
TO5
|
2.7×2.7
|
7
|
0.5
|
5
|
PC10-5b
|
TO5
|
Ø3.57
|
10
|
0.5
|
6
|
PS13-5b
|
TO5
|
3.5×3.5
|
13
|
1
|
6
|
Series 5t: High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
|
|||||
Type No.
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Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
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3.5V
|
850nm 3.5V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PS0.25-5t
|
LCC6.1
|
0.5×0.5
|
0.25
|
0.01
|
0.4
|
PS0.25-5t
|
SMD1206
|
0.5×0.5
|
0.25
|
0.01
|
0.4
|
PC0.55-5t
|
LCC6.1
|
Ø0.84
|
0.55
|
0.01
|
1
|
PC0.55-5t
|
T1 3/4
|
Ø0.84
|
0.55
|
0.01
|
1
|
PC0.55-5t
|
T1 3/4 black
|
Ø0.84
|
0.55
|
0.01
|
1
|
PS1-5t
|
LCC6.1
|
1.0×1.0
|
1
|
0.01
|
1
|
PS7-5t
|
TO5
|
2.7×2.7
|
7
|
0.5
|
1
|
Series 5: High speed photodiodes (for fast rise times at low reverse voltages)
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
20V
|
850nm 20V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PS0.25-5
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TO52S1
|
0.5×0.5
|
0.25
|
0.1
|
0.4
|
PS0.25-5
|
TO52S3
|
0.5×0.5
|
0.25
|
0.1
|
0.4
|
PS0.25-5
|
LCC6.1
|
0.5×0.5
|
0.25
|
0.1
|
0.4
|
PS0.25-5
|
SMD1206
|
0.5×0.5
|
0.25
|
0.1
|
0.4
|
PC0.55-5
|
TO52S1
|
Ø0.84
|
0.55
|
0.2
|
1
|
PC0.55-5
|
LCC6.1
|
Ø0.84
|
0.55
|
0.2
|
1
|
PS1.0-5
|
TO52S1
|
1.0×1.0
|
1
|
0.2
|
1.5
|
PS1.0-5
|
TO52S3
|
1.0×1.0
|
1
|
0.2
|
1.5
|
PS1.0-5
|
LCC6.1
|
1.0×1.0
|
1
|
0.2
|
1.5
|
PS7-5
|
TO5
|
2.7×2.7
|
7
|
0.5
|
2
|
PS11.9-5
|
TO5
|
3.45×3.45
|
11.9
|
1
|
3
|
PC20-5
|
TO8
|
Ø5.05
|
20
|
2
|
3.5
|
PS33-5
|
TO8
|
5.7×5.7
|
33
|
2
|
3.5
|
PS100-5
|
LCC10S
|
10×10
|
100
|
2
|
5
|
PS100-5
|
CERpinG
|
10×10
|
100
|
2
|
5
|
Series 6: IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
10V
|
850nm 10V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PC1-6
|
TO52S1
|
Ø1.13
|
1
|
0.05
|
10
|
PC1-6
|
TO52S3
|
Ø1.13
|
1
|
0.05
|
10
|
PC5-6
|
TO5
|
Ø2.52
|
5
|
0.1
|
13
|
PS7-6
|
TO5
|
2.66×2.66
|
7
|
0.1
|
15
|
PC10-6
|
TO5
|
Ø3.57
|
10
|
0.2
|
20
|
PS13-6
|
TO5
|
3.5×3.5
|
13
|
0.2
|
20
|
PC20-6
|
TO8
|
Ø5.05
|
20
|
0.3
|
25
|
PS33-6
|
TO8
|
5.7×5.7
|
33
|
0.4
|
25
|
PC50-6
|
TO8S
|
Ø7.98
|
50
|
0.5
|
30
|
PC100-6
|
BNC
|
Ø11.28
|
100
|
1
|
40
|
PS100-6
|
BNC
|
10×10
|
100
|
1
|
40
|
PS100-6
|
LCC10S
|
10×10
|
100
|
1
|
40
|
PS100-6
|
CERpinG
|
10×10
|
100
|
1
|
40
|
Series 7: IR photodiodes with fully depletable (very low capacitance levels)
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
10V
|
905nm 10V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PC5-7
|
TO8i
|
Ø2.52
|
5
|
0.05
|
45
|
PC10-7
|
TO8i
|
Ø3.57
|
10
|
0.1
|
50
|
PC20-7
|
TO8Si
|
Ø5.05
|
20
|
0.2
|
50
|
PS100-7
|
LCC10G
|
10×10
|
100
|
1.5
|
50
|
Series Q: Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
150V
|
1064nm 150V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PC10-Q
|
TO8i
|
Ø3.57
|
10
|
0.5
|
14
|
PC20-Q
|
TO8Si
|
Ø5.05
|
20
|
1
|
14
|
PS100-Q
|
LCC10G
|
10×10
|
100
|
80
|
14
|
PC50-Q
|
TO8Si
|
Ø8
|
50
|
2.5
|
14
|
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